CETC Silicon Carbide (SiC) Process Equipment
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Special type ion implanter
We have devoted to designing and manufacturing of ion implanters since 1970s, and possesses a solid technical foundation and strong research & development capabilities. We are currently able to manufacture medium current, high current and high energy ion implanters for 8 or 12 inch wafers. Thereinto, the medium current ion implanters have been applied to mass production lines of large scale integrated circuits.
- Introduction
- Feature
- Parameters
- Application scope
The special ion implanter adopts solid metal ion source, first analyzes and then accelerates the structure, horizontal deflection of 7 ° bidirectional electric scanning, high and low temperature multi position target platform with liquid nitrogen cooling and lamp heating, and wafer clamp type manual loading and unloading. Reliable safety interlock, computer control, automatic operation, real-time dose monitoring.
- 1. Rich types of ion implantation
2. The injection process has a wide temperature range, from low temperature to high temperature of liquid nitrogen
3. Multi station, one loading can complete multiple injection
4. High reliability, long time injection 
- 1. Injection elements: nonmetal: H +, N +, O +, Ar +, he +, Si +, etc
Metal: Ni +, Zr +, Mo +, Fe +, Au +, etc
2. Injected energy: 10-300kev
3. Injection temperature: up to 600 ℃
4. Injection uniformity: 1 δ ≤ 3% 
- Pitting of materials or modification of other material properties or other special applications
ADVISORY MESSAGEA
