CETC Silicon Carbide (SiC) Process Equipment
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SiC high temperature high energy ion implanter
- Introduction
- Feature
- Parameters
- Application scope
The core technology of SiC high temperature and high energy ion implanter is really high independent intellectual property right. The double magnet phase is analyzed first and then accelerated. It has parallel beam technology and new metal ions
Source and high temperature target chamber, solid state AI ion source, meet the process requirements of high energy and high temperature state bet
Source and high temperature target chamber, solid state AI ion source, meet the process requirements of high energy and high temperature state bet
- Large beam, long life AI ion source
High energy, equal gradient electrostatic accelerator for high energy injection
Double deflection scanning system with angle correction to achieve wide beam parallel beam injection
Real time monitoring of injection temperature by thermocouple temperature measurement system
Online uniformity detection and real-time correction control ensure uniformity and accuracy of injection dose
① Loading mode ① manual loading and unloading, batch loading, single chip injection, high efficiency and performance
② Vacuum lock standard cassette loading, vacuum manipulator transmission, continuous single chip injection 
- Chip size: 4 "" - '6“
• injection elements: AI, B, P, n
Maximum energy: single charge 3s0kev; double charge 700kev
• beam: AI + / 1000 μ a; AI + / 200 μ a; B + / 1200 μ a
·Uniformity index: 1 δ ≤ 1%
·Repeatability index: 1 δ ≤ 1%
·Temperature of injected wafer: 500 ℃ 
- Doping injection in the manufacturing process of high voltage power electronics and high power devices based on SiC and microwave power devices based on GaAs.
ADVISORY MESSAGEA
