CETC Silicon Carbide (SiC) Process Equipment
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Special ion implanter
- Introduction
- Feature
- Parameters
- Application scope
The special ion implanter adopts solid metal ion source, first analyzes and then accelerates the structure, horizontal deflection of 7 ° bidirectional electric scanning, high and low temperature multi position target platform with liquid nitrogen cooling and lamp heating, and wafer clamp type manual loading and unloading.Reliable safety interlock, computer control, automatic operation, real-time monitoring of dose.
- ·There are many kinds of ion implantation
·The temperature range of injection process is large, from low temperature to high temperature of liquid nitrogen
·Multi station, one loading can complete multiple injection
·High reliability, long time injection 
- Electrical or other modification of material properties or other special applications
- 1. Injection elements: nonmetal H +, N +, O +, Ar +, he +, Si +, etc
Metal: Ni +, Zr +, Mo +, Fe +, Au +, etc
2. Injected energy: 10-300kev
3. Injection temperature: up to 600 ℃
4. Injection uniformity: 1 δ ≤ 3% 
ADVISORY MESSAGEA
