CETC Silicon Carbide (SiC) Process Equipment
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Medium beam ion implanter
- Introduction
- Feature
- Parameters
- Application scope
The medium beam ion implanter adopts the double magnet structure of first analysis and then acceleration, with the parallel beam technology, adopts the intermittent heat long-life ion source, plasma shower, single-chip electrostatic absorption target, vacuum manipulator transmission, and is suitable for the 0.16-0.1um process production line of 4-6 inch discrete devices and integrated circuit manufacturing, with good injection uniformity and repeatability; the equipment is simple to operate, reliable and highly automated.
- Large beam current, long life ion source;
The wide range energy injection is realized by the constant gradient electrostatic acceleration / deceleration device;
The two-way deflection scanning system is combined with angle correction to realize wide beam parallel beam injection;
On line uniformity detection and real-time correction control to ensure the uniformity and accuracy of injection dose; 
- Ion source life: ≥ 300h
Ion energy: 5-900kev
Injection inclination: 0-60 ° ± 0.25 °
Adjustment range of target plate rotation direction: 0-360 ° ± 0.25 °
Beam parallelism error: ± 0.2 °
Sheet injection mode: single circular sheet injection
Uniformity of injection dose (1 σ): ≤ 0.5%
Injection dose repeatability (1 σ): ≤ 0.5%
Chip size: 4 "- 8" 
- Dopant injection for 4-8 inch discrete devices and integrated circuit manufacturing process
ADVISORY MESSAGEA
