CETC Silicon Carbide (SiC) Process Equipment
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SiC high temperature annealing furnace
- Introduction
- Feature
- Parameters
- Application scope
This equipment can be used in the high temperature annealing activation process of SiC devices after high temperature injection process, and can also meet various special processes such as high temperature annealing activation in vacuum and atmosphere
- ·Maximum applicable substrate size: φ 150 mm
·Maximum loading capacity: 25 pieces / batch
·Typical process temperature: 1000 ℃ - 1900 ℃
·Temperature uniformity in constant temperature zone: ≤ 5 ℃
·Temperature control accuracy: ± 1 ℃ / 24h
·Limit vacuum: ≤ 0.2pa 
ADVISORY MESSAGEA
