Diffusion / oxidation / annealing / alloy system
  • Diffusion / oxidation / annealing / alloy system
  • Diffusion / oxidation / annealing / alloy system

Diffusion / oxidation / annealing / alloy system

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  • Introduction
  • Feature
  • Parameters
  • Application scope
Diffusion / oxidation / annealing / alloy system platform is an important process equipment in the pre process of semiconductor production line, which is used in the diffusion, oxidation, annealing, alloy and sintering processes of large-scale integrated circuit, discrete devices, power electronics, photoelectric devices and optical fiber industries.The design of the horizontal tube furnace takes into account the needs of various technological properties in the production of silicon wafers, with the maximum production capacity and superior performance indicators. 详情
  • High reliability industrial computer + PLC mode is adopted to fully control furnace temperature, advance and retreat boat, gas flow and valve to realize automation of all process;
    With friendly human-machine interface, users can easily modify process control parameters and display various process states at any time;
    There are many kinds of process pipeline, which can be chosen conveniently by users;
    It has powerful software function and fault self diagnosis software, which can greatly save maintenance time;
    Automatic adjustment of constant temperature zone and cascade control can accurately control the actual process temperature of reaction tube;
    It has the functions of over temperature, break couple, hot couple short circuit, process gas flow deviation alarm and protection;
    Products can be customized according to user requirements
  • 特点
  • Applicable wafer size: 2-8 inch wafer
    Working temperature: 600 ℃ ~ 1300 ℃;
    Number of process pipes available: 1-4 pipes / set
    Length and accuracy of constant temperature zone: ≤± 0.5 ℃ / 300 ~ 800mm (800 ℃ ~ 1300 ℃),
    Single point temperature stability: ≤± 0.5 ℃ / 24h (1100 ℃);
    Temperature ramp capacity: maximum heating rate: 20 ℃ / min, maximum cooling rate: 5 ℃ / min;
  • 参数
  • Used for diffusion, oxidation, annealing and alloy process in semiconductor device and integrated circuit manufacturing process
  • 范围
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