CETC Silicon Carbide (SiC) Process Equipment
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MOCVD
- Introduction
- Feature
- Parameters
- Application scope
The organic compounds of group Ⅲ (group Ⅱ) elements and the hydrides of group Ⅴ (group Ⅵ) elements are used as the crystal growth source materials. The thin layer single crystal materials of various group Ⅲ - Ⅴ, group Ⅱ - Ⅵ compound semiconductors and their multiple solid solutions are grown on the substrate by thermal decomposition reaction.
- 1. Three zone resistance heater: independent temperature control in each temperature zone, maximum temperature 1400 ℃
2. Special grid spray head reduces gas-phase pre reaction
3. The V / III ratio of source gas can be adjusted from 1 to 10000
4. High temperature in situ monitoring system: it can monitor and analyze epitaxial growth rate, substrate surface temperature (450 ℃ ~ 1700 ℃), warpage, etc. in real time
5. Automatic substrate loading / unloading system: including laminar flow hood, transmission hub and double-layer buffer chamber 
- 1. Substrate temperature: 450-1200 ℃ for general type and 450-1500 ℃ for high temperature type;
2. Temperature control accuracy: ± 1 ℃;
3. Heating rate: ≥ 3 ℃ / S;
4. Temperature uniformity: ± 1 ℃;
5. Air leakage rate: ≤ 1e-8pal / S;
6. Uniformity: better than ± 3%. 
- Epitaxial growth of GaN based third generation semiconductor materials and fabrication of blue or UV LED chips
ADVISORY MESSAGEA
