CETC Silicon Carbide (SiC) Process Equipment
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SiC epitaxial equipment
- Introduction
- Feature
- Parameters
- Application scope
Homoepitaxial growth of the third generation wide and tight band semiconductor SiC materials.
- 1. Built in electromagnetic induction heating, fast temperature rise and fall
2. The air floating planet on the substrate rotates and moves with good uniformity of temperature and epitaxial film
3. Three layers of horizontal laminar air supply, good air flow uniformity
4. Water cooling of spray head, small pre reaction
5. The glove box is filled with tablets, and the cleanliness of the reaction room is high 
- 1. Wafer size: 4 "～ 6";
2. Maximum temperature: 1700 ℃;
3. Temperature control accuracy: ± 1 ℃;
4. Limit vacuum: better than 3PA;
5. Pressure stability: 100 ~ 1000mbar;
6. Air leakage rate of reaction chamber: 1e-10pa · m3 / S
7. Process gas: SiH4, C3H8, N2, tmal;
8. Carrier gas: AR, H2. 
- Fabrication of SiC epitaxial wafers for high power devices such as SBD, MOSFET and BJT
ADVISORY MESSAGEA
