CETC Silicon Carbide (SiC) Process Equipment
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Flat PECVD
- Introduction
- Feature
- Parameters
- Application scope
Plate PECVD is mainly used for the deposition and growth of SiO2 and SiNx thin films. Its working principle is to introduce high frequency and low voltage, and to discharge the process gas glow in a capacitive coupling way, forming a plasma state, producing a large number of active groups. These active groups chemically react on the surface of the substrate material and are deposited on the surface of the substrate to grow SiO2 or SiNx thin films.
- 1. Manual loading and automatic control of process by Microcomputer
2. Small size, flexible operation
3. It has good process performance and wide range of use. 
- 1. Temperature: 50 ℃ ~ 400 ℃ continuously adjustable;
2. Temperature accuracy: ≤± 2 ℃;
3. Vacuum system: dry pump system or molecular pump system
4. Working pressure: 30pa-300pa adjustable;
5. Air leakage rate of the system: < 0.1pa/min;
6. RF power supply: 13.56MHz, 0-500w continuously adjustable;
7. Uniformity of film thickness: within slice ≤± 3%, between slices ≤± 3%, between batches ≤± 4%. 
- For the preparation of silicon nitride or silicon oxide thin films in semiconductor devices, power electronic devices, optoelectronics, solar cells and other industries
ADVISORY MESSAGEA
