CETC Silicon Carbide (SiC) Process Equipment
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LPCVD
- Introduction
- Feature
- Parameters
- Application scope
Chemical vapor deposition (CVD) is one of the most important processes in semiconductor IC manufacturing, which is mainly used for the growth of polysilicon, silicon nitride and silicon oxide films.It is to activate the raw material gas (or liquid source gasification) with heat energy to produce chemical reaction and generate solid film on the substrate surface.Low pressure chemical vapor deposition is carried out under low pressure. Due to the low pressure and the large average free path of gas molecules, the film has good uniformity, and the substrate can be placed vertically with large loading capacity, which is especially suitable for industrial production.
- 1. The temperature control adopts the cascade control mode to carry out real-time intelligent control on the actual temperature of the substrate.
2. SiC cantilever propeller is used for loading to avoid dust generated by friction with process pipe.
3. Reaction gas molecular gas supply and group injection gas supply, to avoid dust generated by gas-phase reaction and improve uniformity.
4. Closed loop automatic control of working pressure to improve process stability and repeatability. 
- 1. Substrate size: φ 100mm, φ 150 mm, φ 200 mm or φ 100 mm, φ 150 mm
2. Working temperature: 500-900 ℃
3. Process pipeline: 1-3 pipes
4. Length of constant temperature zone: 600mm, 800mm
5. Temperature control accuracy: ± 1 ℃
6. Limit vacuum degree: < 1pA
7. Film thickness uniformity: Si3N4: ± 3%; poly Si: ± 4%; teos-sio2: ± 5%
8. Leakage rate: process pipe vacuumizes, pressure rise rate after valve closing is less than 3PA / min, nitrogen filling is 0.2MPa, and pressure drop rate after 12h is less than 0.1% / h 
- For the preparation of silicon nitride, polycrystalline silicon or silicon oxide films in semiconductor devices, power electronic devices, optoelectronics and other industries
ADVISORY MESSAGEA
