CETC Silicon Carbide (SiC) Process Equipment
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Liquid phase epitaxy equipment
- Introduction
- Feature
- Parameters
- Application scope
It is suitable for the growth of Ⅲ - Ⅴ (or Ⅱ - Ⅵ) compound materials, such as the liquid phase epitaxy growth of compound semiconductor films in the process of optoelectronic device manufacturing. It is the key process equipment for the development and production of optoelectronic devices.
- Horizontal furnace tube, long constant temperature zone, stable temperature;
Cantilever boat, no dust pollution;
Pull boat extension, high positioning accuracy;
Bare tube cooling, cooling speed is fast;
The whole process of industrial computer control, high degree of operation automation, good process repeatability;
Modular design is easy to maintain;
The protection function is complete and reliable, and the cooling function is perfect. 
- Working diameter of quartz tube: 65, 80, 100, 120, 150 mm, etc;
Maximum furnace temperature: 700, 800, 900, 1000, 1100 ℃, etc;
accuracy of constant temperature zone: ≤± 0.5 ℃ (static and dynamic)
constant temperature zone length: 300, 400, 500, 600mm and other options
Temperature drop tracking accuracy: ≤ 0.1 ℃
Vacuum degree: the limit pressure of the sample chamber is ≤ 4pa,
Limit pressure of reaction chamber: ≤ 1.0e-4pa 
- Suitable for the growth of Ⅲ - Ⅴ (or Ⅱ - Ⅵ) compound materials
ADVISORY MESSAGEA
