CETC Silicon Carbide (SiC) Process Equipment
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Inductively coupled plasma etcher
- Introduction
- Feature
- Parameters
- Application scope
Plasma etching (ICP) refers to the use of gas that can react with the etched material, through glow discharge to form a low-temperature plasma, to corrosion the unshielded part of the sample surface.It is etched by chemical reaction of active ion and substrate.It belongs to dry etching equipment.
- Compact structure and small floor area;
Dense small holes spray air supply, large etching range;
It has manual / automatic operation mode, convenient and flexible. 
- 1) Applicable chip size: 4 "～ 8";
2) Etching minimum linewidth: 1 μ M
3) Uniformity: ± 5% (in tablets), ± 3% (between batches)
4) Substrate cooling: water cooling 
- It is used for polishing the substrate surface or material removal, especially for fast etching of non-metallic materials and oxide films, such as polysilicon, SiO2, Si3N4, etc.
ADVISORY MESSAGEA
